| PART |
Description |
Maker |
| A29L400UG-90U A29L400UV-90U A29L400TM-90 A29L400TM |
512K X 8 Bit / 256K X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory 12k × 8 256 × 16位的CMOS 3.0伏只，引导扇区闪
240 x 128 pixel format, LED or EL Backlight
128 x 64 pixel format, LED Backlight available
Replaced by PT78ST109 : 9Vout 1.5A Wide Input Positive Step-Down ISR 3-SIP MODULE -40 to 85
CARRY CASE FOR 300 SERIES DMM
640 x 480 pixel format, CCFL Backlight
|
http://
AMIC Technology, Corp.
AMIC Technology Corporation
|
| BAS40-05T-7 BAS40-04T-7 BAS40-06T-7 BAS40T-7 BAS40 |
128 x 128 pixel format, LED or EL Backlight available
SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
Diodes Inc.
Diodes Incorporated
|
| SML50T47 |
128 x 128 pixel format, LED or EL Backlight available
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEMELAB LTD
Seme LAB
|
| MGB2310TK-X MGB2310TK-1 MGB2310TK-2 MGB2310TK-3 |
5MM OVAL TYPE HIGH BRIGHTNESS YELLOW GREEN LED LAMP
128 x 64 pixel format, LED or EL Backlight available
|
MICRO-ELECTRONICS[Micro Electronics]
|
| M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| QM50TX-H |
240 x 128 pixel format, LED or EL Backlight
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M2S12D20TP M2S12D20TP-75 M2S12D30TP M2S12D30TP-75L |
512M Double Data Rate Synchronous DRAM
128 x 64 pixel format, LED Backlight available
|
Mitsubishi Electric Corporation
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| CXK5T16100TM- CXK5T16100TM-12LLX CXK5T16100TM |
128 x 64 pixel format, LED Backlight available
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY[Sony Corporation]
|
| BAS70-04T-7 BAS70-05T-7 BAS70-06T-7 BAS70T-7 BAS70 |
SURFACE MOUNT SCHOTTKY BARRIER DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
128 x 128 pixel format, LED or EL Backlight available 表面贴装肖特基二极管
CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 200 A rms nominal, ±600 A range
|
http://
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| RM10TN-2H |
Rectifier Diode Modules for ASIPM
Three-Phase Diode Bridge Modules
128 x 64 pixel format, LED Backlight available
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
